1 of 6 optimum technology matching ? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt soi power enable input output preamp driver v+ attenuator adjust RFAM2790 45mhz to 1003mhz gaas edge qam integrated amplifier the RFAM2790 is an integrated edge qam amplifier module. the part employs gaas phemt die, gaas mesfet die, a 20db range variable attenuator and a power enable feature, has high output capa bility, and is operated from 45mhz to 1003mhz. it provides excellent linearity and superior return loss performance with low noise and optimal reliability. features ? excellent linearity ? extremely high output capability ? voltage controlled attenuator ? power enable feature ? optimal reliability ? low noise ? unconditionally stable under all terminations ? 27db typical gain at 1003mhz ? 410ma typical at 12v dc applications ? 45mhz to 1003mhz downstream edge qam rf modulators ? headend equipment ds121001 ? ? package: 9-pin, 11.0mm x 11.0mm x 1.375mm RFAM2790 45mhz to 1003mhz gaas edge qam inte- grated ampli- fier RFAM2790sb sample bag with 5 pieces RFAM2790sr 7" reel with 100 pieces RFAM2790tr7 7" reel with 250 pieces RFAM2790tr13 13" reel with 750 pieces RFAM2790pcba-410 fully assembled evaluation board
2 of 6 RFAM2790 ds121001 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit v+ dc supply over-voltage (5 minutes) 14 v storage temperature -40 to +100 c operating mounting base temperature -30 to +100 c power enable voltage 10 v parameter specification unit condition min. typ. max. overall v+ = 12v; t mb = 30c; z s = z l = 75 ? ; attenuation = 0db power gain 27.0 db f = 45mhz 26.0 27.0 28.0 db f = 1003mhz slope[1] -0.5 0.0 1.0 db f = 45mhz to 1003mhz flatness of frequency response 0.5 1.0 db f = 45mhz to 1003mhz (peak to valley) input return loss 18 20 db f = 45mhz to 1003mhz output return loss 16 18 db noise figure 4.0 5.0 db f = 50mhz to 1003mhz total current consumption (dc) 410.0 450.0 ma distortion v+ = 12v; t mb = 30c; z s = z l = 75 ? ; attenuation = 0db adjacent channel power ratio (acpr); n = 4 contiguous 256qam channels -58 dbc channel power = 58dbmv; adjacent channel up to 750khz from channel block edge -60 dbc channel power = 58dbmv; adjacent channel (750khz from channel block edge to 6mhz from channel block edge) -63 dbc channel power = 58dbmv; next-adjacent channel (6mhz from channel block edge to 12mhz from channel block edge) -65 dbc channel power = 58dbmv; third-adjacent channel (12mhz from channel block edge to 18mhz from channel block edge) 2nd order harmonic (hd2); n = 1 256qam channel -63 dbc channel power = 66dbmv; in each of 2n con- tiguous 6mhz channels coinciding with 2nd harmonic components (up to 1000mhz); 3rd order harmonic (hd3); n = 1 256qam channel -63 dbc channel power = 66dbmv; in each of 3n con- tiguous 6mhz channels coinciding with 3rd harmonic components (up to 1000mhz); ctb -67 dbc v o = 46dbmv, flat, 79 analog channels plus 75 digital channels (-6db offset)[2] xmod -60 dbc cso -70 dbc cin 64 db caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rohs (restriction of hazardous subs tances): compliant per eu directive 2002/95/ec.
3 of 6 RFAM2790 ds121001 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . application circuit attenuator v+ = 12v; t mb = 30c; z s = z l = 75 ? attenuator range 0 to 20 db attenuator voltage 0v to 12v power enable/disable amp enabled logic high (3.3v) applied to power enable pin[3] amp disabled logic low (0v) applied to power enable pin[4] [1] the slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency. [2] 79 analog channels, ntsc frequency raster: 55.25mhz to 547.25mhz, +46dbmv flat output level, plus 75 digital channels, -6db offset relative to the equivalent analog carrier. composite second order (cso) - the cso parameter (both sum and difference products) is defined by the ncta. composite triple beat (ctb) - the ctb parameter is defined by the ncta. cross modulation (xmod) - cross modulation (xmod) is measured at baseband (selective voltmeter method), referenced to 100% modu lation of the carrier being tested. carrier to intermodulation noise (cin) - the cin parameter is defined by ansi/scte 17 (test procedure for carrier to noise). [3] logic high is defined as power enable voltage >2v [4] logic low is defined as power enable voltage <0.4v parameter specification unit condition min. typ. max. c4 4.7nf c2 4.7nf c1 dni d2 mm3z5v6t1 r1 10k ? d3 tgl34-33a c3 4.7nf c5 4.7nf c7 dni d1 tqp200002 25v fb1 bead 60 ? t1 rfxf0006 t2 rfxf0008 v+ rf input rf output 1 2 3 4 5 6 7 8 9 c6 4.7nf power enable att. adjust gnd u1 RFAM2790 c9 4.7nf c8 4.7nf d4 tqp200002 25v t3 rfxf0009
4 of 6 RFAM2790 ds121001 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board layout component chart component type value qty designator comments evaluation board RFAM2790pcba-410 1 capacitor dni 1 c1 optional, to improve matching in application capacitor 4.7nf 7 c2, c3, c4, c5, c6, c8, c9 capacitor dni 1 c7 optional, to improve matching in application resistor 10k ? 1r1 chip bead 60 ? at 100mhz 1 fb1 esd protection diode tqp200002 2 d1, d4 zener voltage diode mm3z5v6t1g 1 d2 transient voltage suppressor diode tgl34-33a 1 d3 transformer rfxf0006 1 t1 transformer rfxf0008 1 t2 transformer rfxf0009 1 t3 dut RFAM2790 1 u1
5 of 6 RFAM2790 ds121001 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . pin configuration pin names and descriptions pin name description 1power enable logic level (3.3v) power enable control 2 attenuator adjust voltage adjustable attenuator 3rf in + rf amp positive input 4rf in - rf amp negative input 5rf out - rf amp negative output 6dc out 12v output 7rf out + rf amp positive output 8v2+ supply voltage 5.6v 9v1+ supply voltage 12v 1 2 3 4 5 6 7 8 9 power ? enable attenuator adjust rf in + rf in - rf out - dc out rf out + v2 + v1 + gnd
6 of 6 RFAM2790 ds121001 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing dimensions in millimeters pcb metal land pattern dimensions in millimeters
|
